Physics Faculty Mentors

Michael J. Hones, Ph.D.

University of Notre Dame, 1970
Professor of Physics
Office: MEN 367C; Phone: 610-519-4885
E-mail: michael.hones@villanova.edu

Professor Hones teaches the General Physics course and its associated lab for Biology majors, as well as courses in the Philosophy of Science. Initially trained in Experimental High-Energy
Physics (HEP) at The University of Notre Dame, he shifted his research activities at Villanova to
Raman Spectroscopy during the 1970s. In the early 1980s his interests shifted to the history and
philosophy of science, specifically dealing with epistemological issues relevant to the acquisition
of experimental knowledge in physics. With his background in HEP, he has published articles
that examine scientific realism in the context of experimental practice. Typical philosophical
studies focus primarily on those aspects of scientific realism that pertain to theory development
and choice, often citing T. S. Kuhn's seminal work The Structure of Scientific Revolutions.
Hones has focused on the often-neglected component in these discussions – that of the role of experimental practice in the acquisition of scientific knowledge.

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Joseph Schick, Ph.D.

Drexel University, 1987
Assistant Professor of Physics
Office: MEN 365B; Phone: 610-519-7873
E-mail: joseph.schick@villanova.edu

Dr. Schick is currently working on computational modeling of point defects and defect complexes in semiconductors. Semiconductor devices such as diodes, transistors and integrated circuits are constructed from solid materials such as silicon and gallium arsenide. Defects are used to control the electrical properties of these materials which, in turn, enable the construction of useful devices. Gallium arsenide is particularly interesting in its use as a source of laser light, which can be found in CD players and in some fiber optic systems. Dr. Schick uses quantum mechanical computational methods to study the various effects that defect configurations have on the electronic and structural properties in gallium arsenide. These computations contribute to a more complete interpretation of experimental measurements made on these materials.

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